Samsung MZ-V6E1T0BW Solid State

Weight: 8 g
Brand: Samsung
Description: Form factor: M.2 2280, Capacity: 1000 GB, Application: Notebook and desktop, Connector: M.2, Interfaces: PCI-E, Read speed: 3200 MB/s, Write speed: 1900 MB/s, flash type: TLC 3D NAND, MTBF: 1500000 h
Width: 22
Height: 2.3
Interfaces: PCI-E
Purpose: For laptop and desktop
Length: 80 mm
Connector: M.2
Recording speed: 1900 MB/s
Reading speed: 3200 MB/s
Max. working temperature: 70°C
Capacity: 1 TB
Form Factor: M.2 2280
Technology support: NVMe, TRIM, 4K sector support, Data encryption
Flash type: TLC 3D NAND
Random write speed 4 KB blocks: 360000 IOPS
MTBF: 1500000 h
Shock resistance at work: 1500 G
Storage shock resistance: 1500 G
Type PCI-E: PCI-E 3.0 x4