Solid State Samsung MZ-V7P512BW

Weight: 8 g
Brand: Samsung
Description: Form Factor: M.2 2280, Capacity: 512 GB, Purpose: External, Laptop & Desktop, Gaming, Connector: M.2, Interfaces: PCI-E, Read Speed: 3500 MB/s, Write Speed: 2300 MB/s, flash type: V-NAND 2-bit MLC, operating time
Width: 22.15
Height: 2.38
Interfaces: PCI-E
Power consumption: 5.2W
Additional Information: NVMe 1.3
Purpose: External, for laptop and desktop, gaming
Length: 80.15 mm
Connector: M.2
Recording speed: 2300 MB/s
Reading speed: 3500 MB/s
Max. working temperature: 70°C
Capacity: 512 GB
Form Factor: M.2 2280
Technology support: NVMe, TRIM, 4K sector support, Data encryption
Controller: Samsung Phoenix
Flash type: V-NAND 2-bit MLC
Buffer volume: 512 MB
Random write speed 4 KB blocks: 500000 IOPS
MTBF: 1500000 h
Shock resistance at work: 1500 G
Storage shock resistance: 1500 G
Type PCI-E: PCI-E 3.0 x4
Total Bytes Written TBW: 600 TB